Engineer / Sr. Eng / Principal Eng - NAND CMOS Device

Job Detail

As a NAND CMOS Device Integration Engineer, you will help set the direction for current and future CMOS technology for Micron’s NAND Memory Technology Roadmap. You will work with the Design Team to set electrical targets and define transistor structures to meet these targets. You will guide the device technology development and be in close relation with Process Integration, Design Engineering, Design, Design Rules, Reliability, Transistor Modeling, TCAD (Technology Computer-Aided Design), and Parametric Test, to name a few. In addition, you will ensure that the developed technology is manufacturable and highly yielding and that these considerations are designed into the technology from the start. Responsibilities include, but not limited to: Together with your peers, you shape and execute our NAND-CMOS roadmap and make sure to align to product roadmaps. You give directions on how to improve our device portfolio, both in performance and cost effectiveness. You define, execute, and analyze silicon experiments for future device generations. Interface with Design Engineers to define transistor targets, deliver transistor models, and optimize critical layout constrained Design Rules. Work with TCAD simulation group to develop strategies for transistor structures to meet targets. You strive to ensure that transistor models are correctly targeted to anticipate final silicon. Define electrical test structures for transistors, isolation, design rule verification, and process monitoring. Highly motivated to ensure transistors are developed meeting the required reliability standards. You take initiative to collaborate with Manufacturing to ensure transistors are performing as expected and to debug yield / reliability issues. You foster and enable a collaborative working style and team spirit by mentoring less experienced colleagues.